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Device Structures and Characteristics of Laser Diodes with ZnMgSSe Cladding Layers
Author(s) -
Ohata T.,
Itoh S.,
Nakayama N.,
Matsumoto S.,
Nakano K.,
Ozawa M.,
Okuyama H.,
Tomiya S.,
Ikeda M.,
Ishibashi A.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870203
Subject(s) - optoelectronics , materials science , cladding (metalworking) , laser , diode , wavelength , optics , laser diode , physics , metallurgy
ZnSe based laser diodes exhibit best initial performances such as low threshold current with ZnCdSe/ZnSSe/ZnMgSSe SCH‐SQW structure. The device lifetime is improved with the ZnCdSe/ZnSSe/ZnMgSSe SCH‐MQW structure. Laser emission of 471 nm wavelength is obtained under pulsed injection at room temperature with ZnSe/ZnMgSSe DH structure.