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Blue‐Green ZnSe Laser Diodes for Optoelectronics. Present State at Würzburg University
Author(s) -
Landwehr G.,
Hommel D.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870202
Subject(s) - optoelectronics , diode , materials science , laser , lasing threshold , doping , ternary operation , quantum well , ohmic contact , cladding (metalworking) , substrate (aquarium) , blue laser , layer (electronics) , optics , nanotechnology , physics , composite material , wavelength , oceanography , geology , computer science , programming language
A review is given on the research activities at Würzburg University in the field of blue‐green emitting ZnSe laser diodes. Of great importance for both the structural and electrical properties is the possibility to grow a GaAs buffer layer on the GaAs substrate prior to the II–VI growth. Pulsed room temperature lasing with a duty cycle up to 17% is obtained using quaternary ZnMgSSe cladding layers, ternary ZnSSe waveguides, and a single CdZnSe quantum well. Important issues for long‐term stability of such laser diodes like growth start, p‐type doping, and ohmic contacts are discussed.