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Photoionization of Shallow Donor Impurities in Finite‐Barrier Quantum Wells
Author(s) -
Ilaiwi K. F.,
ElSaid M.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870108
Subject(s) - photoionization , shallow donor , impurity , quantum well , condensed matter physics , photon energy , photon , atomic physics , physics , binding energy , chemistry , molecular physics , quantum mechanics , ionization , ion , laser
The dependence of the photoionization cross‐section on photon energy is calculated for shallow donors in finite‐barrier GaAs/Ga 1− x Al x As quantum wells as well as the binding energy as a function of well width. The effect of a magnetic field is also considered.