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Gain Processes in ZnTe Epilayers on GaAs
Author(s) -
Majumder F. A.,
Klingshirn C.,
Westphäling R.,
Kalt H.,
Naumov A.,
Stanzl H.,
Gebhardt W.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221860228
Subject(s) - exciton , picosecond , materials science , epitaxy , metalorganic vapour phase epitaxy , optoelectronics , excitation , recombination , scattering , plasma , laser , optics , chemistry , condensed matter physics , physics , nanotechnology , layer (electronics) , biochemistry , quantum mechanics , gene
Optical gain processes in ZnTe epitaxial layers grown by MOVPE on GaAs substrates are reported. Depending on the excitation conditions, optical gain related to exciton‐exciton scattering or due to recombination in an electron‐hole plasma is identificd by means of the variable‐stripe‐length method. The experimental gain spectra are compared to model calculations for the respective gain processes. Stimulated emission up to room temperature is observed under intense picosecond excitation.