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Optical Properties and Structure of a‐Si 1‐ x Ge x :H Films
Author(s) -
Sotiropoulos J.,
Fuhs W.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221860211
Subject(s) - amorphous solid , spectral line , dielectric function , materials science , crystallography , germanium , analytical chemistry (journal) , absorption spectroscopy , absorption (acoustics) , optical spectra , dielectric , chemical bond , silicon , chemistry , optics , physics , optoelectronics , chromatography , astronomy , organic chemistry , composite material
A study of the optical spectra in alloys of a‐Si 1‐x Ge x : H in the energy range 0.5 to 10 eV is presented. The absorption spectra and the reflectivity are measured for films with 0 ≦ x ≦ 1 and the imaginary part of the dielectric function, ϵ 2 (ω), is calculated by Kramers‐Kronig analysis. The spectra are discussed by considering the bonding structure of the films and the behavior is compared with that of other amorphous alloys (a‐Si 1‐x C x : H, a‐Si 1‐x N x : H). Whereas in the latter alloys the optical properties are determined by the SiSi bonds up to x ≈ 0.5 the contribution of the various bonds to ϵ 2 (ω) cannot be separated in a Si/Ge:H due to the fact that in this case the bond strengths of the SiSi, SiGe, and GeGe bonds are very similar.