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Point Defect Observations by Molecular Dynamics and Calculated TEM Imaging
Author(s) -
Mattei G.,
Mazzone A. M.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221860204
Subject(s) - observable , molecular dynamics , displacement (psychology) , crystallographic defect , silicon , materials science , molecular physics , point (geometry) , energy (signal processing) , dynamics (music) , computational physics , chemical physics , physics , condensed matter physics , optoelectronics , geometry , quantum mechanics , psychology , mathematics , acoustics , psychotherapist
A simulation method which combines molecular dynamics and calculated TEM imaging is presented. The simulation is applied to irradiated crystalline silicon and silver to clarify the minimum amount of disorder which could be experimentally observed. It is found that in Si isolated cascades formed at energies near the displacement threshold are clearly visible, while in Ag observable disordered regions are generated only by the overlapping of many cascades launched with energy well above che energy displacement threshold.