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Point Defects in CdTe Containing Simultaneously Lithium and a Group IV Impurity
Author(s) -
ZielińskaPurgał R.,
Piwowarczyk J.,
Nazarewicz W.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221860203
Subject(s) - impurity , cadmium telluride photovoltaics , lithium (medication) , group (periodic table) , chemistry , crystallographic defect , nearest neighbour , crystallography , materials science , nanotechnology , medicine , endocrinology , organic chemistry , artificial intelligence , computer science
Abstract Infrared absorption associated with localized vibrational modes in CdTe containing both Li and a group IV impurity (Si, Ge, or Sn) is studied. On the basis of the obtained experimental results it is established that the following point defects play a dominant role: 1. isolated Li cd , 2. Li cd ‐Li, nearest‐neighbour pairs, and 3. Li cd M cd next‐nearest‐neighbour pairs, where M cd denotes a Si, Ge, or Sn impurity at a Cd site. It is also found that some localized vibrational modes of Li cd ‐M cd pairs are connected with the coupled motion of Li cd and M cd impurities and that the model of a weakly coupled impurity pair, usually used to analyze experimental results, is not applicable in this case.