Analysis of Exciton Absorption Peak Broadening Contributions in InGaAs/InP Multi Quantum Wells | Zendy

Arena C. | Zendy; Rotelli B. | Zendy; Tarricone L. | Zendy

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Analysis of Exciton Absorption Peak Broadening Contributions in InGaAs/InP Multi Quantum Wells

Author(s) -

Arena C.,

Rotelli B.,

Tarricone L.

Publication year - 1994

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221850221

Subject(s) - full width at half maximum , quantum well , exciton , molecular beam epitaxy , absorption (acoustics) , absorption spectroscopy , phonon , chemical beam epitaxy , spectroscopy , condensed matter physics , chemistry , materials science , molecular physics , epitaxy , optics , optoelectronics , physics , laser , nanotechnology , quantum mechanics , layer (electronics)

The excitonic absorption of InGaAs/InP multi quantum wells prepared by chemical beam epitaxy with different growth conditions and structure parameters are studied in the temperature range 8 to 300 K and in the spectral region where the heavy hole to electron (hh–e) transition corresponding to n = 1 arises. In particular, a lineshape modelling is attempted using a Gaussian function. The temperature variation of the full width at half maximum (FWHM) is discussed in terms of an intrinsic contribution Γ 0 plus a thermal broadening due to the interaction with longitudinal optical (LO) phonons. The Γ 0 value may be considered as a helpful parameter to investigate the structural quality of the samples studied, leading to the observation that absorption spectroscopy is a simple and powerful characterization technique of MQW.

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