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Characterization of (Ga x In 1− x ) 2 Se 3 Raman and Infrared Spectra for 0 ≦ x ≦ 0.5
Author(s) -
Dubček P.,
Etlinger B.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221850108
Subject(s) - raman spectroscopy , vibration , infrared , tetrahedron , displacement (psychology) , spectral line , characterization (materials science) , molecular physics , infrared spectroscopy , materials science , metal , molecular vibration , normal mode , chemistry , crystallography , analytical chemistry (journal) , optics , nanotechnology , physics , acoustics , psychology , organic chemistry , chromatography , astronomy , metallurgy , psychotherapist
A modified random element displacement model is used to investigate the composition dependence of Raman and infrared spectra of (Ga x In 1− x ) 2 Se 3 . A computer program that enables the simulation of explicit metal site substitution and stressing the tetrahedral character of the structure is developed. A good agreement with experiment is obtained by using a few free numerical parameters indicating that the vibration modes depend mainly on the structure details. A vibration type assignment to the experimental results is possible for isolated peaks, though more than one vibration mode contribute to some of them. Due to the presence of many close modes and their poor optical activity the vibration type assignment is not possible in the range higher than 180 cm −1 .