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The Uniaxial Strain Effect on the Ternary Alloy Semiconductor Ga 1− x Al x P
Author(s) -
Badi N.,
Abid H.,
Soudini B.,
Amrane N.,
Driz M.,
Dufour J. P.,
Aourag H.,
Khelifa B.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221840210
Subject(s) - condensed matter physics , materials science , semiconductor , ternary operation , lattice constant , alloy , conduction band , valence (chemistry) , valence band , band gap , lattice (music) , crystal (programming language) , electron , composite material , physics , optics , optoelectronics , quantum mechanics , diffraction , computer science , acoustics , programming language
The effect of static uniaxial compression along the cubic direction 〈100〉 is studied. The empirical pseudo‐potential method (EPM) within the so‐called virtual crystal approximation (VCA) is used to compute the electronic charge densities at selected k ‐points of the valence and the conduction band edges in Ga 1− x Al x P. These charge densities are used to study the modification of the bonding and the electronic properties of the alloy with respect to the composition and the lattice constant variations along the 〈100〉 direction.