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Porous Silicon Photoluminescence Enhancement and Saturation Resulting from Thermal Annealing in Nitrogen Gas
Author(s) -
Chen Zhiliang,
Bosman Gijs
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221840124
Subject(s) - photoluminescence , annealing (glass) , porous silicon , materials science , passivation , silicon , nanostructure , porosity , nitrogen , chemical engineering , saturation (graph theory) , optoelectronics , nanotechnology , composite material , chemistry , mathematics , organic chemistry , layer (electronics) , combinatorics , engineering
The results of thermal annealing at 800 and 900 °C of porous silicon samples in N 2 ambient conditions are discussed as a function of annealing time, annealing procedure, and sample preparation. The results show that N 2 annealing plays an important role in surface passivation and nanostructure feature size shrinkage and may result in photoluminescence (PL) intensity enhancement and saturation with annealing time under appropriate conditions. The experimental results strongly support the quantum confinement model for PL in porous silicon.