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On the theory of shallow acceptor states in real semiconductors
Author(s) -
Zubkova S. M.,
Filin V. G.,
Smelyanskaya E. V.,
Tolpygo K. B.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221830215
Subject(s) - sphalerite , acceptor , exciton , semiconductor , valence band , impurity , diamond , valence (chemistry) , materials science , condensed matter physics , semiconductor materials , computational chemistry , molecular physics , chemical physics , chemistry , mineralogy , physics , band gap , quantum mechanics , optoelectronics , metallurgy , pyrite
Shallow acceptor states in crystals with diamond and sphalerite type structures are investigated by analytical and numerical methods, proposed by the authors for an exciton problem previously. The complicated valence band structure and the chemical nature of the impurity are taken into account. The obtained results for B and Al in Ge, Si, Zn Te, SiC, and GaAs are in good agreement with available experimental data and theoretical calculations of other works.