Premium
Parameters of band structure in surface layers of zero‐gap semiconductors (CdHg)Te
Author(s) -
Yafyasov A.,
Bogevolnov V.,
Perepelkin A.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221830208
Subject(s) - condensed matter physics , dispersion relation , effective mass (spring–mass system) , semiconductor , semimetal , electron , band gap , quasi fermi level , fermi surface , materials science , physics , nuclear physics , quantum mechanics , superconductivity , optoelectronics
The field‐effect method in electrolytes is used for finding the band structure parameters in surface layers of zero‐gap semiconductors (ZGS) (CdHg)Te. It is found that the conduction band both in surface layers and in the volume of ZGS (CdHg)Te obeys the ultrarelativistic dispersion relation. The electron effective mass in surface layers of ZGS (CdHg)Te is close to the electron effective mass in the volume of ZGS (CdHg)Te. It is stated that the heavy‐hole valence band both in surface layers and in the volume of ZGS (CdHg)Te has a non‐parabolic dispersion relation, and that the heavy‐hole effective mass is less than 0.5m 0 and depends on the composition of (CdHg)Te. It is found that the position of the Fermi level in ZGS (CdHg)Te is described in the model of zero‐gap semiconductors with fluctuating potential. The “step” structure in the dependences of the differential capacitance of the space‐charge layer in ZGS (CdHg)Te on temperature at fixed values of the surface potential is observed experimentally for the first time.