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Type‐II GaAs/AlAs superlattices under high excitation
Author(s) -
Boujdaria K.,
Scalbert D.,
la Guillaume C. Benoit À
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221830127
Subject(s) - superlattice , photoluminescence , condensed matter physics , excitation , hartree , plasma , condensation , band gap , luminescence , atomic physics , quantum well , electron , materials science , chemistry , physics , nuclear physics , thermodynamics , optoelectronics , quantum mechanics , laser
High‐intensity photoluminescence data on GaAs/AlAs superlattices and multi‐quantum wells of type‐II at low temperature are reported. The variation with density of the renormalized band gap reveals the competition between the Hartree energy, a consequence of non‐local neutrality, which tends to open the gap and the many‐body effects (mainly exchange). Preliminary analysis for a lot of samples with widely different periods provides a satisfactory fit with the Hartree‐Fock model. The kinetics of luminescence and total decay in the electron‐hole plasma regime is measured. In some samples, a phase transition is observed which is tentatively interpreted in terms of the electron‐hole liquid condensation.