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Modification of the absorption edge due to grain boundaries and mechanical stresses in polycrystalline semiconductor films
Author(s) -
Maity A. B.,
Chaudhuri S.,
Pal A. K.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221830114
Subject(s) - grain boundary , semiconductor , crystallite , enhanced data rates for gsm evolution , materials science , absorption (acoustics) , absorption edge , attenuation coefficient , condensed matter physics , composite material , optics , optoelectronics , metallurgy , physics , microstructure , band gap , telecommunications , computer science
Explicit expressions for the absorption coefficient beyond the absorption edge are obtained by considering the Franz‐Keldysh effect and mechanical stress to be operative simultaneously in the grain boundary regions of polycrystalline semiconductor films. The expressions are successfully utilized to explain the tail end of the absorption spectrum of ZnTe films.