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Implantation Profile and Positronium Fraction for Low‐Energy Positrons
Author(s) -
Shrivastava S. B.,
Agrawal Kavita
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221820211
Subject(s) - positronium , positron , gaussian , exponential function , derivative (finance) , diffusion , materials science , yield (engineering) , atomic physics , gaussian function , physics , aluminium , nuclear physics , thermodynamics , electron , mathematical analysis , mathematics , quantum mechanics , financial economics , economics , metallurgy
The diffusion equation for positrons is solved subjected to two types of implantation profiles, namely, exponential and derivative of Gaussian type. The positronium fraction obtained using the two profiles has been compared with experimental results. It is found that in general, the use of the derivative of the Gaussian‐type profile gives better results. The maximum yield of the positronium as a function of temperature is predicted corresponding to the different orientations of the aluminum surface.