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Effect of Sb Additives on Electron Mobility in Amorphous Selenium
Author(s) -
Mikla V. I.,
Rubish V. M.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221820209
Subject(s) - amorphous solid , electron , conduction band , selenium , materials science , analytical chemistry (journal) , electron transport chain , electron mobility , thermal conduction , condensed matter physics , chemistry , crystallography , optoelectronics , physics , metallurgy , composite material , biochemistry , chromatography , quantum mechanics
Abstract Time‐of‐flight drift mobility experiments are carried out on amorphous Sb x Se 100−x to investigate the charge transport mechanism in these films. Electron drift mobility‐temperature data indicate that electron transport in a‐Sb x Se 100−x alloys is controlled by a set of shallow traps at 0.33 eV below the conduction band edge. Although the trap depth remains unchanged with increasing Sb content, the effective drift mobilities of electrons decrease with the Sb content in Sb x Se 100−x amorphous films.