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Effect of Crystal Anisotropy on Infrared Hole Transitions in Uniaxially Stressed Semiconductors
Author(s) -
Bakhanova E. V.,
Vasko F. T.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221820110
Subject(s) - materials science , birefringence , condensed matter physics , anisotropy , semiconductor , permittivity , degenerate energy levels , infrared , valence (chemistry) , stress (linguistics) , dielectric , optics , optoelectronics , physics , linguistics , philosophy , quantum mechanics
Peculiarities of permittivity are studied for semiconductors with degenerate band structure modified by the uniaxial compression which induces valence band splitting. For [001] and [111] stress orientations cubic crystals become uniaxial, whereas for the [110] stress orientation they become biaxial. The contribution of intersubband hole transitions to the permittivity and the absorption coefficient is found to be significantly anisotropic in the frequency range corresponding to the subband splitting energy. Therefore, studying birefringence for different stress orientations may allow deformation potentials and stiffness constants to be determined.