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Spectrum of an Electron Localized by Electrostatic Image Forces in Thin Semiconductor Layers
Author(s) -
Tkach M.,
Holovatsky V.,
Voitsekhivska O.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221820107
Subject(s) - dielectric , electron , semiconductor , spectrum (functional analysis) , crystal (programming language) , layer (electronics) , atomic physics , materials science , constant (computer programming) , condensed matter physics , optics , physics , optoelectronics , nanotechnology , quantum mechanics , computer science , programming language
Abstract The spectrum of an electron confined in a layer with the dielectric constant ϵ, embedded between two media with larger (ϵ > > ϵ) and smaller (ϵ < < ϵ) values of the dielectric constant is calculated. The dependence of the spectrum on the layer thickness and on the ratio between the dielectric constants of the layer and the media is calculated. It is shown that if the crystal thickness increases, the whole spectrum of electrons shifts into the region of negative energies and becomes quasi‐hydrogenic there.