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Planar Channeling Radiation from Relativistic Electrons and Positrons in Silicon
Author(s) -
Kumar V. Hari,
Pathak A. P.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221820105
Subject(s) - electron , silicon , atomic physics , planar , physics , radiation , positron , plane (geometry) , electron shell , shell (structure) , nuclear physics , materials science , ion , ionization , geometry , quantum mechanics , optoelectronics , composite material , computer graphics (images) , mathematics , computer science
Abstract The characteristics of the radiation emitted from relativistic positrons and electrons channeled along the (110) plane in silicon single crystals is calculated using a realistic potential which is based on the atomic shell structure of target atoms. The results are compared with experimental results and are found to agree reasonably well.