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Valence Band Crystal Field Splitting of Hexagonal Diluted Magnetic Semiconductors
Author(s) -
Twardowski A.,
ChernYu K.,
Chen F. R.,
Kuo S. S.,
Ro C. S.,
Chiu K. C.,
Chou W. C.,
Yang S. L.,
Chuu D. S.,
Chen Y. F.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221810219
Subject(s) - crystal field theory , energy level splitting , crystal (programming language) , valence (chemistry) , hexagonal crystal system , condensed matter physics , semiconductor , ion , magnetic semiconductor , materials science , magnetic field , zero field splitting , valence band , semimetal , band gap , crystallography , chemistry , physics , optoelectronics , spin polarization , electron , organic chemistry , quantum mechanics , computer science , programming language
The valence band crystal field and spin‐orbit splitting in hexagonal diluted magnetic semiconductors based on CdSe and CdS is studied. It is found that the crystal field splitting is practically magnetic ion independent for CdSe based crystals, whereas in the case of CdS based samples a strong influence of magnetic ion substitution on crystal field splitting is observed.