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Hydrostatic Pressure Effect on Point Defect Electronic States in Narrow‐Gap and Gapless Semiconductors
Author(s) -
Strikha M. V.,
Vasko F. T.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221810118
Subject(s) - gapless playback , hydrostatic pressure , condensed matter physics , semiconductor , band gap , hydrostatic equilibrium , symmetry (geometry) , physics , materials science , quantum mechanics , thermodynamics , geometry , mathematics
A study is made of the influence of hydrostatic pressure on point defect states in narrow‐gap and gapless semiconductors, described by the three‐band Kane model. It is shown that shifts of energy levels of centres of different symmetry with pressure are different. The h‐centre level follows strictly the v‐band top. On the contrary, the l‐c level shift depends on pressure in a more complicated way, and is determined by system parameters. The transition from resonance to localized defect states due to the transition from gapless to narrow‐gap semiconductors caused by hydrostatic pressure is also studied.