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Phase Transition in Heavily Doped Gallium Arsenide
Author(s) -
Prudnikov V. V.,
Prudnikova I. A.,
Semikolenova N. A.
Publication year - 1994
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221810110
Subject(s) - gallium arsenide , doping , gallium , materials science , photoluminescence , phase transition , absorption (acoustics) , free carrier , phase (matter) , condensed matter physics , optoelectronics , chemical physics , chemistry , physics , metallurgy , composite material , organic chemistry
The results of investigation of GaAs single crystals heavily doped by group VI elements are considered. The doping effects are studied by methods of free carrier infrared absorption, photoluminescence, ultrasonic, and calorimetric methods. For the explanation of the observed peculiarities in doped gallium arsenide the thermodynamic model of phase transitions is proposed using the properties of complex formation in this semiconducting compound.