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Si‐Related Point Defects in CdTe
Author(s) -
ZielinskaPurgal R.,
Nazarewicz W.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221800202
Subject(s) - crystallographic defect , cadmium telluride photovoltaics , silicon , materials science , doping , infrared , absorption (acoustics) , free carrier , crystallography , molecular physics , optoelectronics , chemical physics , chemistry , optics , physics , composite material
Infrared absorption associated with localized vibrational modes is studied in CdTe highly doped with silicon. On the basis of the experimental data obtained it is established that Si can form two kinds of point defects in CdTe: Si Cd defects acting as donors and Si Te defects acting as acceptors. No evidence is found of the presence of Si ca ‐Si Te pairs and other defect complexes which could be formed as a result of electrostatic interaction between electrically active defects.