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On the Photoconductivity in Hydrogenated Amorphous Silicon
Author(s) -
Licea I.,
Tomozeiu N.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221790224
Subject(s) - photoconductivity , amorphous silicon , trapping , materials science , silicon , kinetics , recombination , amorphous solid , glow discharge , optoelectronics , chemistry , physics , crystallography , crystalline silicon , plasma , quantum mechanics , ecology , biochemistry , gene , biology
Some experimental data about the photoconductivity of n‐type a‐Si: H samples obtained by glow discharge technics are presented. The photoconductivity and the shape of the lux ampere characteristics presenting two straight lines with variable slopes are explained in terms of electron trapping and recombination kinetics. A comparison between the experimental data and the corresponding expressions which result from the considered model is made.