Premium
On a Simplified Analysis of the Effective Electron Mass in Ultrathin Films of Nonparabolic Semiconductors in the Presence of a Parallel Magnetic Field
Author(s) -
Ghatak K. P.,
Bhattacharyya D.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221790213
Subject(s) - effective mass (spring–mass system) , condensed matter physics , semiconductor , ternary operation , electron , fermi level , magnetic field , materials science , fermi energy , lattice (music) , physics , optoelectronics , quantum mechanics , computer science , acoustics , programming language
Abstract An attempt is made to study the effective electron mass at the Fermi level in ultrathin films of nonparabolic semiconductors in the presence of a parallel magnetic field on the basis of a newly derived electron dispersion law. It is found, taking n‐Hg 1− x Cd x Te and In 1− x Ga x As x P 1− y lattice matched to InP as examples, that the effective Fermi level mass depends on the subband index in addition to the Fermi energy due to the presence of the magnetic field. The effective masses corresponding to different subbands increase with increasing surface electron concentration and decreasing film thickness. Besides, thc numerical values of the masses in quaternary alloys are smaller than those for ternary semiconductors. In addition, the corresponding well‐known results of ultrathin films of nonparabolic Semiconductors in the absence of the magnetic field are also obtained as special cases of our generalized formulation under certain limiting conditions.