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Filling‐Factor‐Dependent Cyclotron Resonance in GaInAs/AlInAs Modulation‐Doped Single Quantum Wells
Author(s) -
Jianc D. S.,
Goiran M.,
Leotin J.,
Askenazy S.,
Zhanc Y. H.,
Plooc K.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221790111
Subject(s) - cyclotron resonance , scattering , quantum well , effective mass (spring–mass system) , condensed matter physics , filling factor , fermi gas , chemistry , shubnikov–de haas effect , doping , electron , resonance (particle physics) , oscillation (cell signaling) , ionized impurity scattering , cyclotron , impurity , materials science , quantum oscillations , atomic physics , physics , optics , laser , biochemistry , organic chemistry , quantum mechanics
The line shape of cyclotron resonance (CR) absorption is investigated for a two‐dimensional electron gas (2DEG) in modulation‐doped GaInAs/AlInAs narrow SQW structures. CR absorption is measured as functions of far infrared (FIR) frequency, temperature, and carrier concentration. At low temperature and short FIR wavelengths, a well‐defined filling‐factor‐dependent quantum oscillation structure is obtained for samples with high 2DEG concentrations, exhibiting clear maxima and minima and a phase change point at the top of the CR peak. The modulated scattering is attributed to short‐range scatterers originating mainly from alloy scattering. A part of the contribution comes from ionized impurity scattering. The analysis of the temperature dependence of the CR line width and Hall mobility gives additional support to this argument. An electron effective mass as high as 0.063 m o in In 0.53 Ga 0.47 As is observed due to the non‐parabolicity effect.