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ESR Study of Deuterated Analogue of (BEDT‐TTF) 4 Hg 3 I 8
Author(s) -
Yudanova E. I.,
Lyubovskaya R. N.,
Hoffmann S. K.,
Sekretarczyk G.,
Graja A.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221790105
Subject(s) - tetrathiafulvalene , electron paramagnetic resonance , deuterium , laser linewidth , condensed matter physics , semiconductor , chemistry , phase transition , spin (aerodynamics) , ion , conductor , crystallography , materials science , nuclear magnetic resonance , atomic physics , molecule , physics , laser , optoelectronics , organic chemistry , optics , composite material , thermodynamics
Electron spin resonance g‐factor, linewidth, and spin susceptibility of single crystals of the fully deuterated bis(ethylenedithio)tetrathiafulvalene (D 8 ‐(BEDT‐TTF)) based conductor with octaiodine‐ mercurate anion (Hg 3 I 8 ) 2 ‐ are found to show pronounced temperature dependences between 4 and 300 K. A first‐order phase transition of the type semiconductor‐semiconductor is observed at 258 K. Discussion of the ESR parameters and the nature of the phase transition is given.