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Effect of High Pressure on the Electrical Conductivity of TlInX 2 (X = Se, Te) Layered Semiconductors
Author(s) -
Rabinal M. K.,
Titus S. S. K.,
Asokan S.,
Gopal E. S. R.,
Godzaev M. O.,
Mamedov N. T.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221780217
Subject(s) - hydrostatic pressure , electrical resistivity and conductivity , perpendicular , semiconductor , materials science , pressure coefficient , hydrostatic equilibrium , band gap , conductivity , high pressure , condensed matter physics , analytical chemistry (journal) , chemistry , optoelectronics , thermodynamics , electrical engineering , physics , chromatography , quantum mechanics , engineering , geometry , mathematics
The dc electrical conductivity of TlInX 2 (X = Se, Te) single crystals, parallel and perpendicular to the (001) c ‐axis is studied under high quasi‐hydrostatic pressure up to 7.0 GPa, at room temperature. Conductivity measurements parallel to the c ‐axis are carried out at high pressures and down to liquid nitrogen temperatures. These materials show continuous metallization under pressure. Both compounds have almost the same pressure coefficient of the electrical activation energy parallel to the c ‐axis, d(Δ E ∥)/d P = −2.9 × 10 −10 eV/Pa, which results from the narrowing of the band gap under pressure. The results are discussed in the light of the band structure of these compounds.