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Diamagnetic and Dielectric Susceptibilities of AlSb and GaSb
Author(s) -
Sahu T.,
Nayak S. K.,
Acharya R. N.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221780211
Subject(s) - diamagnetism , ansatz , condensed matter physics , scaling , semiconductor , dielectric , valence (chemistry) , band gap , basis (linear algebra) , electron , physics , chemistry , materials science , quantum mechanics , mathematics , magnetic field , geometry
The magnetic susceptibility (χ) and dielectric constant (ϵ 0 ) of AlSb and GaSb are calculated by adopting a linear combination of hybrids (LCH) method developed by us. We have constructed basis functions for the valence and conduction bands and used them in the general expression for χ of intrinsic semiconductors to derive an expression for χ of these A N B 8‐ N semiconductors. Our LCH basis states are also used in the Kramers‐Kronig relation at ω = 0 to obtain an expression for ϵ 0 . The Hall‐Weaire‐Thorpe approximation is used to calculate the matrix elements between different hybrids and made an average energy gap ansatz ( E g ) for energy gap denominator occuring in the expression for χ and ϵ 0 . Our expressions for χ and ϵ 0 , which are obtained in terms of matrix elements between intrasite hybrids and between adjacent hybrids forming a bond, are free from any scaling parameter, whereas in the earlier theories arbitrary scaling parameters have been used to fit with the experimental results. Our results agree well with the available experimental results.