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Deformation Potentials in A II B IV C 2 V Ternary Chalcopyrite Semiconductors
Author(s) -
Rincón C.,
Fernández B. J.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221780119
Subject(s) - chalcopyrite , ternary operation , semiconductor , valence (chemistry) , deformation (meteorology) , materials science , conduction band , atomic physics , crystallography , chemistry , physics , copper , nuclear physics , electron , metallurgy , optoelectronics , organic chemistry , computer science , composite material , programming language
Deformation potentials of valence and conduction bands in A II B IV C 2 V chalcopyrite semiconductors are calculated from the variation of the energy gap with temperature and pressure. From a comparison with their binary analogues A III B V it is found that values of deformation potentials in these compounds are considerably higher than in the binaries which could explain their lower carrier mobility.