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On the Hot Phonon Spot Dynamics in Thin Films
Author(s) -
Agaev F. F.,
Guseinov N. M.,
Rustamov K. A.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221780110
Subject(s) - phonon , hot spot (computer programming) , non equilibrium thermodynamics , condensed matter physics , thin film , semiconductor , materials science , scattering , dynamics (music) , optics , physics , optoelectronics , thermodynamics , nanotechnology , computer science , acoustics , operating system
The hot phonon spot (HPS) formation and development in thin semiconductor films as a result of photoexcited charge‐carrier cooling is discussed. The film is assumed to be thin enough so that the thickness d follows d / v ≪ τ 1 , (ω), where v is a mean phonon group speed and τ 1 ,(ω) a spontaneous decay time of nonequilibrium longitudinal phonons. Phonon scattering on defects is neglected. The light pumping parameter values that lead to the HPS formation are obtained. The equations that describe the dynamics of spot development are also discussed.