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On a Generic Equation Modelling the Persistent Photoconductive Response of Semiconductor Devices
Author(s) -
Anagnostakis E. A.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221770230
Subject(s) - superposition principle , photoconductivity , semiconductor , eigenfunction , transformation (genetics) , physics , master equation , photoelectric effect , mathematical analysis , mathematics , optoelectronics , quantum mechanics , quantum , chemistry , gene , biochemistry , eigenvalues and eigenvectors
A generic equation is proposed and discussed concerning the persistent photoconductive response of semiconductor devices, both of homostructure and heterostructure type, in terms of the sheet electron density evolution against the incoming cumulative photon dose. The equation models the persistent photoconductivity (PP) development up to saturation of the capacity of the fundamental conduction sub‐level accessible to the photoelectrons. The solution of the generic equation is effected through the respective Green's function, materialising the PP descriptor of the illuminated semiconductor structure, as the superposition of the eigenfunctions of the adjoint homogeneous Fredholm integral transformation.