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Electron Transport and Superconductivity in Transition Metal‐Containing Diamond‐Like Films
Author(s) -
Bozhko A. D.,
Chudinov S. M.,
Rodichev D. Yu.,
Pypkin B. N.,
Stizza S.,
Berrettoni M.,
Briggs A.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221770223
Subject(s) - condensed matter physics , superconductivity , electrical resistivity and conductivity , reentrancy , materials science , electric field , diamond , electron , dielectric , metal , critical field , transition temperature , conductivity , electrical resistance and conductance , chemistry , physics , composite material , metallurgy , optoelectronics , quantum mechanics
The electron transport in W‐, Mo‐, and Nb‐containing diamond‐like films with specific resistance of 10 −4 to 10 14 Ω cm is investigated. It is shown that for most dielectric films (with low metal concentration) at room temperature the electric conductivity is in agreement with the Poole‐Frenkel model and tends to be activationless following Shklovskii's mechanism at low temperatures. The transition to a low‐resistance state is observed as an electric field of about 5 × 10 5 V/cm is applied. At high metal concentrations (more than 18%) evidence of superconductivity with T c ≦ 4 K is observed. At temperatures below T c one or two reentrant transitions to the resistive state are revealed. The influence of the magnetic field on the superconducting and reentrant transitions is studied. Possible mechanisms for the reentrant transitions are also discussed.