Premium
Modified Thomas‐Fermi Approximation. A Surprisingly Good Tool for the Treatment of Semiconductor Layer Structures Including Various Two‐Dimensional Systems
Author(s) -
Trott S.,
Trott M.,
Nakov V.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221770214
Subject(s) - poisson's equation , convergence (economics) , poisson distribution , position (finance) , thomas–fermi model , point (geometry) , fermi gamma ray space telescope , effective mass (spring–mass system) , mathematics , physics , quantum mechanics , mathematical analysis , electron , geometry , statistics , finance , economics , economic growth
In this paper the calculational procedure of the electronic structure of δ‐doped quantum well HEMTs is studied with emphasis on the calculation rather than on the results. It will be shown that a modified Thomas‐Fermi approximation yields very accurate results which differ from the exact solutions of the Kohn‐Sham equations by only percents while the CPU time is reduced drastically and convergence problems are avoided. The question hinges on the point of an appropriate ϱ( V ( r ), r ) in the Poisson equation. The construction of this charge density is discussed in detail. Care is taken on the nonseparability of the Schrödinger‐like equation with a position dependent mass.