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Raman Light Scattering Due to Collisions of Wannier‐Mott Excitons with Impurities and between Them
Author(s) -
Vlasov G. K.,
Prokhorov D. V.,
Chizhikova E. I.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221760225
Subject(s) - exciton , raman scattering , biexciton , scattering , x ray raman scattering , semiconductor , light scattering , impurity , coulomb , mott scattering , condensed matter physics , physics , raman spectroscopy , atomic physics , small angle neutron scattering , optics , quantum mechanics , neutron scattering , electron
The theory of Raman light scattering due to Coulomb (exchange) interaction of an exciton in an intermediate state with neutral impurities in semiconductors is developed. The consideration is based on the third‐order perturbation theory. The possibility of such an approach is proved even for conditions of resonant Raman light scattering in direct‐gap semiconductors. The theoretical estimations for scattering cross‐section and scattering efficiency are well fitted with experimental data obtained by Ulbrich et al. on CdTe crystals. However, full explanation of these data must involve exciton scattering on bound excitons or biexcitons.