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Optical Properties of Multi‐Layer Structures. IV. Non‐Linear Absorption of light in Multi‐Layer Structures
Author(s) -
Fomin V. M.,
Pokatilov E. P.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221760209
Subject(s) - phonon , permittivity , condensed matter physics , attenuation coefficient , dielectric , hamiltonian (control theory) , materials science , semiconductor , electron , absorption (acoustics) , optics , optoelectronics , physics , quantum mechanics , mathematics , composite material , mathematical optimization
The theory of non‐linear response of an electronic subsystem in planar multi‐layer structures (including quantum wells) to a strong electromagnetic field is developed. On the basis of the exact Hamiltonian of the electron‐phonon interaction for such structures a non‐linear dielectric permittivity tensor is obtained by the statistical operator method in the path integration representation. In the three‐layer structures with a thin middle semiconducting layer and moderate values of the dielectric permittivity of the outer dielectric media the contribution to the absorption due to the interaction of electrons with surface phonons is found to prevail over that of bulk phonons and to ensure a substantially more rapid rise in the absorption coefficient with increasing intensity in comparison with the case of a semiconductor crystal.