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Hopping Mechanism of Hole Transport in SiO 2 at Cryogenic Temperatures
Author(s) -
Bolotov V. V.,
Vishnyakov A. V.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221760115
Subject(s) - polaron , condensed matter physics , conductivity , phonon , energy transport , field (mathematics) , materials science , electrical resistivity and conductivity , physics , quantum mechanics , engineering physics , electron , mathematics , pure mathematics
On the basis of the small polaron conductivity conception the hole transport between localized states at cryogenic temperatures in SiO 2 is analyzed. The phonon‐hole coupling constant is determined. It is shown that the hopping probability increases exponentially with increasing energy difference Δ E between the initial and final states up to Δ E = 2.5 eV and then rapidly drops. It is shown that both field and time dependencies of the hole transport can be explained by the proposed model.