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Measurement of Planar Channeling Radiation from 19.2 MeV Electrons in Silicon Using a Microtron
Author(s) -
Poturaev S. V.,
Kumakhov M. A.,
Ognev L. I.,
Iskandarian V. M.,
Khatkov T. A.,
Stirin A. I.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221760103
Subject(s) - microtron , electron , radiation , spectral line , physics , planar , silicon , atomic physics , achromatic lens , optics , nuclear physics , optoelectronics , computer graphics (images) , astronomy , computer science
An experimental set‐up for studying radiation of channeled relativistie electrons in single crystals is designed. The source of electrons is a 19.2 MeV microtron. With the help of a mirror‐symmetric achromatic magnetic system a beam of electrons wih an angular divergence less than 0.3 mrad is transported to a single crystal target. The measured radiation spectra at planar channeling of 19.2 MeV electrons in silicon single crystals 3, 7, and 18 μm thick are presented and compared with the calculated spectra. Theoretical calculations are based on a newly developed method using a complex potential for describing the line broadening.