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Tunneling‐Assisted Photon Emission in MIS(p + ) Junctions
Author(s) -
Volkov R. A.,
Chuiko A. F.,
Dmitriev M. V.
Publication year - 1993
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221750107
Subject(s) - quantum tunnelling , electron , cathode , atomic physics , fermi level , materials science , semiconductor , photon , density of states , condensed matter physics , electrode , metal , chemistry , physics , optoelectronics , optics , quantum mechanics , metallurgy
Analytical expressions for the tunneling current and the intensity of light emission associated with the inelastic tunneling of electrons in sandwich structures are obtained for semi‐classical and quantummechanical descriptions of the electron gas in the electrodes. A metal—insulator—p + ‐semiconductor (MIS(p + )) junction with a crystallographically oriented metal cathode is considered. To increase the spectral density of the tunneling‐assisted photon emission from the MIS(p + ) junction, it is proposed to employ a cathode made of such transition metals as Ni, Co, Mn, Ti, Fe, as well as of Pt, β‐NiAl which exhibit peaks of the density of occupied states near the Fermi levels.