Premium
Free carrier contribution to dynamic dielectric function of heavily doped semiconductors. Application to n‐type silicon
Author(s) -
Auslender M.,
Hava S.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221740226
Subject(s) - dielectric , free carrier , condensed matter physics , semiconductor , drude model , dielectric function , doping , silicon , lorentz transformation , free carrier absorption , wavelength , formalism (music) , relaxation (psychology) , materials science , physics , quantum mechanics , optoelectronics , art , musical , visual arts , social psychology , psychology
A new approximation to calculate the free carrier contribution to the infrared dielectric function in n‐type silicon at room temperature that interpolates the quantum and classical absorption regimes is proposed. This approximation generalizes the Drude‐Lorentz approximation by introducing a frequency dependence of the relaxation parameter which is calculated via Mori formalism. Calculations of carrier concentration and wavelength dependences of the relaxation parameter, dielectric constant and optical constants for concentration intervals from 1.3 × 10 15 to about 1.3 × 10 20 cm −3 and in the wavelengths range from 1 to 30 μm are performed. The deviations from the Drude‐Lorentz approximation are discussed.