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Influence of tunneling on trapping kinetics in thin insulating layers
Author(s) -
Schmidt M.,
Köster H.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221740210
Subject(s) - quantum tunnelling , trapping , trap (plumbing) , kinetic energy , atomic physics , oxide , time constant , condensed matter physics , rectangular potential barrier , kinetics , fermi level , chemistry , molecular physics , materials science , physics , electron , quantum mechanics , ecology , organic chemistry , engineering , meteorology , electrical engineering , biology
The process of trap occupation in Si/SiO 2 /M structures might be accompanied by a tunneling (detrapping) process near the adjacent contact ( x < 5 nm), depending on the distance, the trap energy relative to the Fermi level of the adjacent contact, and the actual trap filling state. The equilibrium between the two opposing processes gives rise to a dynamical trapping behaviour and adjust itself at x g , the boundary position between stationarily occupiable and unoccupiable traps. For a given tunneling rate constant the equilibrium depends on the capture rate constant and therefore on the current density j only. The realistic values of the capture cross‐section σ and of the effective trap concentration N eff can differ by more than one order of magnitude from the value determined by using a simple first‐order kinetic which neglects tunneling phenomena. The developed dynamic trapping model gives a reliable basis for trap analysis in thin oxide layers. For hole traps at E = 6.3 eV we determined σ h = 1.5 × 10 −14 cm 2 and N eff = 1.47 × 10 13 cm −2 .