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Polarization of dislocation absorption and luminescence in direct gap semiconductors with edge dislocations
Author(s) -
Razumova M. A.,
Khotyaintsev V. N.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221740116
Subject(s) - condensed matter physics , burgers vector , semiconductor , anisotropy , polarization (electrochemistry) , dislocation , absorption edge , materials science , isotropy , luminescence , dislocation creep , valence (chemistry) , band gap , physics , chemistry , optics , optoelectronics , quantum mechanics
The bound electron states at an edge dislocation in direct gap semiconductors are investigated in the deformation potential model taking into account the triple degeneracy of the valence band maximum. The experimentally observed polarization of dislocation absorption (DA) and dislocation luminescence along the Burgers vector is explained theoretically. The interaction between the anisotropic dislocation field and the anisotropic valence subbands gives rise to three series of hole dislocation levels of different depths, the DA polarization being determined by the polarization of the optical transitions from the deepest holes series to the isotropic states of the conduction band.