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Microphysical Analysis of the Magnetooptical Interband Effects of Amorphous Semiconductor Films
Author(s) -
Kessler F. R.,
Schulz R.,
Sievers B.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221730230
Subject(s) - condensed matter physics , semiconductor , germanium , amorphous solid , faraday effect , physics , polarization (electrochemistry) , materials science , amorphous semiconductors , amorphous silicon , silicon , superposition principle , optics , optoelectronics , quantum mechanics , chemistry , crystalline silicon , magnetic field , crystallography
The polarization modulation spectroscopy of the (integral) Faraday and Kerr rotation of amorphous germanium and silicon films permits the separation of the magnetooptical contributions from various interband transitions with high sensitivity. The analysis is based primarily on a mathematical matrix calculation. This method yields the differential magnetooptical effects of arbitrary successions of multilayer systems including coherent and incoherent multiple reflections and magnetooptical interface effects. A quantum‐mechanical “density of states model” has been developed for the microphysical interpretation which is based on the optical constants and on the Mott‐CFO‐model of amorphous semiconductors. In this microphysical model the energy‐dependent integral sum‐g‐factor is obtained from the sign‐correct superposition of the magnetooptical contributions of the interband transitions at all critical points of higher energy. The weight of these magnetooptical contributions is significantly different for amorphous germanium and silicon.