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Anomalous Hall Effect in a Nonmagnetic Semiconductor
Author(s) -
Obukhov S. A.,
Volkova I. K.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221730220
Subject(s) - condensed matter physics , impurity , hall effect , magnetic field , magnetic impurity , coulomb , semiconductor , insulator (electricity) , physics , electron , quantum mechanics , optoelectronics
The anomalous Hall effect is considered in a system of magnetic impurities on the example of the nonmagnetic semiconductor InSb: Mn. From an analysis of the Hall constant as a function of impurity (Mn) concentration, temperature, and magnetic field strength the magnetic susceptibility of the system and the magnetic ordering temperature, T ≈ 1 K, are determined. A physical model is proposed giving a qualitative explanation of the anomalous Hall effect in a system of magnetic impurities. It is argue that the exchange interaction at the boundary for the metal–insulator transition in a system of magnetic impurities damps Coulomb fluctuations.