Anomalous Hall Effect in a Nonmagnetic Semiconductor | Zendy

Obukhov S. A. | Zendy; Volkova I. K. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Anomalous Hall Effect in a Nonmagnetic Semiconductor

Author(s) -

Obukhov S. A.,

Volkova I. K.

Publication year - 1992

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221730220

Subject(s) - condensed matter physics , impurity , hall effect , magnetic field , magnetic impurity , coulomb , semiconductor , insulator (electricity) , physics , electron , quantum mechanics , optoelectronics

The anomalous Hall effect is considered in a system of magnetic impurities on the example of the nonmagnetic semiconductor InSb: Mn. From an analysis of the Hall constant as a function of impurity (Mn) concentration, temperature, and magnetic field strength the magnetic susceptibility of the system and the magnetic ordering temperature, T ≈ 1 K, are determined. A physical model is proposed giving a qualitative explanation of the anomalous Hall effect in a system of magnetic impurities. It is argue that the exchange interaction at the boundary for the metal–insulator transition in a system of magnetic impurities damps Coulomb fluctuations.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research