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Field Ionization of Shallow Donors in Germanium
Author(s) -
Žurauskas S.,
Dargys A.,
Žurauskienė N.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221730217
Subject(s) - germanium , ionization , field (mathematics) , shallow donor , atomic physics , physics , optoelectronics , electron , nuclear physics , quantum mechanics , silicon , mathematics , pure mathematics , ion
Transient currents due to field ionization of shallow donors are investigated in thin germanium samples by transient tunneling spectroscopy. In particular, the electron tunneling time from antimony atoms to the conduction band is measured as a function of electric field strength, lattice temperature, and electric field direction. The results are compared with a simple hydrogenic model. Various factors which may influence the TTS spectra, such as impurity impact ionization, doping inhomogeneity, etc., are discussed. It is concluded that pure electron tunneling from the ground 1 s state of antimony atoms takes place at lattice temperatures smaller than 7 K.