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Optical Properties of Barrier‐Modulated InGaAs/GaAs Quantum Wires
Author(s) -
Gré;us Ch.,
Orth A.,
Daiminger F.,
Butov L. V.,
Reinecke T. L.,
Forchel A.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221730131
Subject(s) - quantum wire , excitation , quantization (signal processing) , materials science , blueshift , quantum , optoelectronics , quantum well , enhanced data rates for gsm evolution , condensed matter physics , gallium arsenide , optics , photoluminescence , physics , telecommunications , laser , quantum mechanics , computer science , computer vision
The optical properties of barrier‐modulated InGaAs/GaAs quantum wires with dimensions down to 25 nm are investigated. The wires show a high quantum efficiency that is mainly due to the processing which is free of defects and also due to efficient carrier capture effects. For wire widths below about 50 nm a blue shift of the emission due to lateral quantization, is observed. In high excitation experiments a second subband is observed for narrow wire widths. The experimentally observed wire width dependence of the band edge and of the subband splitting are in agreement with model calculations based on the geometry of our structures.