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1D Charge Carrier Dynamics in GaAs Quantum Wires Carrier Capture, Relaxation, and Recombination
Author(s) -
Christen J.,
Kapon E.,
Grundmann M.,
Hwang D. M.,
Joschko M.,
Bimberg D.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221730130
Subject(s) - charge carrier , luminescence , thermalisation , materials science , relaxation (psychology) , recombination , optoelectronics , nanoscopic scale , thermal conduction , quantum efficiency , chemical physics , quantum , spontaneous emission , carrier lifetime , quantum wire , chemical vapor deposition , photoluminescence , condensed matter physics , molecular physics , chemistry , atomic physics , nanotechnology , physics , optics , silicon , psychology , social psychology , laser , biochemistry , quantum mechanics , composite material , gene
Time‐ and spatially resolved luminescence of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates is reported. The effective width of these nanoscopic wires is as small as 9.5 nm, giving rise to a separation of 45 meV for the quasi‐one‐dimensional conduction subbands. The QWRs exhibit high luminescence efficiency and the radiative recombination lifetime of the quantum confined carriers is found to be larger than 310 ps. Combined spectral‐time‐resolved experiments directly visualize the carrier capture process and the thermalization of the 1D carriers in the QWR structures.