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Absorption Edge Singularities for Non‐Equilibrium Carrier Distributions
Author(s) -
Foing J.P.,
Joffre M.,
Jackson M. K.,
Oudar J.L.,
Hulin D.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221730128
Subject(s) - femtosecond , coherence (philosophical gambling strategy) , gravitational singularity , absorption (acoustics) , excited state , enhanced data rates for gsm evolution , semiconductor , atomic physics , absorption edge , materials science , physics , molecular physics , optics , laser , optoelectronics , quantum mechanics , band gap , telecommunications , computer science
Non‐equilibrium carrier distributions are studied in GaAs by monitoring the induced bleaching in femtosecond pump–probe experiments. Unchirped pump pulses are required in order to avoid asymmetrical coherence oscillations. The observation of an induced absorption on the high‐energy side of the hole burning is explained in terms of absorption edge singularities, emphasizing the importance of many‐body effects in highly excited semiconductors.