Coherent and Incoherent Exciton Dynamics in II–VI Semiconductors | Zendy

Pantke K.H. | Zendy; Lyssenko V. G. | Zendy; Razbirin B. S. | Zendy; Schwab H. | Zendy; Erland J. | Zendy; Hvam J. M. | Zendy

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Coherent and Incoherent Exciton Dynamics in II–VI Semiconductors

Author(s) -

Pantke K.H.,

Lyssenko V. G.,

Razbirin B. S.,

Schwab H.,

Erland J.,

Hvam J. M.

Publication year - 1992

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221730107

Subject(s) - exciton , dephasing , degenerate energy levels , biexciton , semiconductor , diffusion , condensed matter physics , physics , range (aeronautics) , dynamics (music) , atomic physics , materials science , quantum mechanics , acoustics , composite material

Dynamics of free and bound excitons in CdSe and localized excitons in CdSe x S 1− x are studied by degenerate four‐wave mixing and light‐induced grating experiments. In the coherent range, the dephasing of excitons is determined as a function of temperature, density and energy. For incoherent excitons, recombination lifetimes and diffusion coefficients are determined. In particular, the mobility of excitons in CdSe x S 1− x near the mobility edge is studied.

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