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Coherent and Incoherent Exciton Dynamics in II–VI Semiconductors
Author(s) -
Pantke K.H.,
Lyssenko V. G.,
Razbirin B. S.,
Schwab H.,
Erland J.,
Hvam J. M.
Publication year - 1992
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221730107
Subject(s) - exciton , dephasing , degenerate energy levels , biexciton , semiconductor , diffusion , condensed matter physics , physics , range (aeronautics) , dynamics (music) , atomic physics , materials science , quantum mechanics , acoustics , composite material
Dynamics of free and bound excitons in CdSe and localized excitons in CdSe x S 1− x are studied by degenerate four‐wave mixing and light‐induced grating experiments. In the coherent range, the dephasing of excitons is determined as a function of temperature, density and energy. For incoherent excitons, recombination lifetimes and diffusion coefficients are determined. In particular, the mobility of excitons in CdSe x S 1− x near the mobility edge is studied.